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ST STP12N120K5RoHS

Manufacturer
ST
MPN
STP12N120K5
LCSC Part #
C495245
Packaging
TO-220
Customer #
Key Attributes
1.2kV 12A 4V 250W 620mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS
Datasheetpdf iconST STP12N120K5
In-Stock: 55
55 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 4.7004$ 4.70
10+$ 4.0038$ 40.04
30+$ 3.5888$ 107.66
100+$ 3.1689$ 316.89
500+$ 2.9752$ 1487.60
1,000+$ 2.8889$ 2888.90
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)0.6pF
RDS(on)620mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.37nF
Gate Charge(Qg)44.2nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These ultra-high voltage N-channel power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. This results in significantly reduced on-resistance and ultra-low gate charge, making them ideal for applications with demanding power density and efficiency requirements.

Features

AI Translation
  • Industry-leading figure of merit (FOM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener protection

Applications

AI Translation
  • Switching applications