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ST STD2NK90ZT4RoHS

Manufacturer
ST
MPN
STD2NK90ZT4
LCSC Part #
C495235
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET N-CH 900V 2.1A TO-252(DPAK)
Datasheetpdf iconST STD2NK90ZT4
In-Stock: 54
54 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.6016$ 0.60
10+$ 0.4794$ 4.79
30+$ 0.4272$ 12.82
100+$ 0.362$ 36.20
500+$ 0.2919$ 145.95
1,000+$ 0.2739$ 273.90
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-252(DPAK)
Drain to Source Voltage900V
Current - Continuous Drain(Id)2.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)485pF
Gate Charge(Qg)-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

AI Translation
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Zener-protected

Applications

AI Translation
  • Switching applications