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ST STB12NM50T4
| Manufacturer | |
| MPN | STB12NM50T4 |
| LCSC Part # | C495231 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 550V 12A D2PAK |
| Datasheet |  ST STB12NM50T4 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -65℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 160W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 39nC@400V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Features
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- 100% avalanche tested
- Low gate input resistance
- Tight process control and high manufacturing yields
Applications
- Switching application
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.0667 | $ 3.07 |
| 10+ | $ 2.7165 | $ 27.17 |
| 30+ | $ 2.497 | $ 74.91 |
| 100+ | $ 2.2713 | $ 227.13 |
| 500+ | $ 2.1701 | $ 1085.05 |
| 1,000+ | $ 2.1265 | $ 2126.50 |
| 2,000+ | $ 2.1094 | $ 4218.80 |
| 4,000+ | $ 2.0969 | $ 8387.60 |
Standard Packaging1000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -65℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 160W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 39nC@400V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Features
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- 100% avalanche tested
- Low gate input resistance
- Tight process control and high manufacturing yields
Applications
- Switching application
C495231 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |