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ST STB12NM50T4
| Manufacturer | |
| MPN | STB12NM50T4 |
| LCSC Part # | C495231 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 550V 12A D2PAK |
| Datasheet | ST STB12NM50T4 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 250pF | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 160W | |
| Configuration | - | |
| Operating Temperature | -65℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 12A | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 39nC@400V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 250pF | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 160W | |
| Configuration | - | |
| Operating Temperature | -65℃~+150℃ | |
| Drain to Source Voltage | 550V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 12A | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 39nC@400V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Introduction
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Features
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- 100% avalanche tested
- Low gate input resistance
- Tight process control and high manufacturing yields
Applications
- Switching application
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 250pF | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 160W | |
| Configuration | - | |
| Operating Temperature | -65℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 12A | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 39nC@400V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 250pF | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 160W | |
| Configuration | - | |
| Operating Temperature | -65℃~+150℃ | |
| Drain to Source Voltage | 550V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 12A | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 39nC@400V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Introduction
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Features
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- 100% avalanche tested
- Low gate input resistance
- Tight process control and high manufacturing yields
Applications
- Switching application
C495231 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |