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MagnaChip Semicon MDES14N045RH product image
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MagnaChip Semicon MDES14N045RHRoHS

Manufacturer
MagnaChip Semicon
MPN
MDES14N045RH
LCSC Part #
C4944866
Packaging
D2PAK-7L
Customer #
Key Attributes
135V 180A 3.9V 375W 3.8mΩ@10V 1 N-channel N-Channel D2PAK-7L Single FETs, MOSFETs RoHS
Datasheetpdf iconMagnaChip Semicon MDES14N045RH
In-Stock: 639
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Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.7384$ 1.74
10+$ 1.4752$ 14.75
30+$ 1.3306$ 39.92
100+$ 1.1682$ 116.82
500+$ 1.095$ 547.50
800+$ 1.0626$ 850.08
Standard Packaging800/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMagnaChip Semicon
PackagingD2PAK-7L
Drain to Source Voltage135V
Output Capacitance(Coss)923pF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.267nF
Gate Charge(Qg)123nC@10V
Vgs±20V
TypeN-Channel
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Introduction

AI Translation

The MDES14N045RH is a product of Magnachip's latest generation medium-voltage MOSFET technology, delivering outstanding performance in ultra-low on-resistance (Rds(on)), fast switching, and superior quality. These devices are also suitable for industrial applications such as low-power drives for e-bikes, light electric vehicles, DC/DC converters, and general-purpose applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 135 V
  • Drain current (ID) = 180 A at gate-source voltage (VGS) = 10 V
  • Ultra-low on-resistance: RDS(ON) < 4.5 mΩ at VGS = 10 V
  • Operating temperature up to 175°C
  • 100% tested for single-pulse avalanche energy (UIL)
  • 100% tested for gate resistance (Rg)
  • 100% tested for drain-source voltage variation (△VDS)

Applications

AI Translation
  • Low-power drivers for e-bikes
  • Light electric vehicles
  • DC/DC converters
  • General-purpose applications