HXY MOSFET NVMFS5C670NLWFAFT3G-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	NVMFS5C670NLWFAFT3G-HXY
LCSC Part #	C49420421
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	MOSFET 60V 80A DFN-8L(5x6)
Datasheet	HXY MOSFET NVMFS5C670NLWFAFT3G-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Configuration	Standalone
Drain to Source Voltage	60V
Output Capacitance(Coss)	286pF
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
Pd - Power Dissipation	108W
Reverse Transfer Capacitance (Crss@Vds)	257pF
RDS(on)	6mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.136nF
Gate Charge(Qg)	90nC@10V
Type	N-Channel

In-Stock: 99

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Qty	Unit Price	Total Amount
1+	$ 1.2728$ 1.0819	$ 1.08
10+	$ 1.0563$ 0.8979	$ 8.98
30+	$ 0.9375$ 0.7969	$ 23.91
100+	$ 0.8024$ 0.6821	$ 68.21
500+	$ 0.7422$ 0.6309	$ 315.45
1,000+	$ 0.7162$ 0.6088	$ 608.80
Standard Packaging5000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Configuration	Standalone
Drain to Source Voltage	60V
Output Capacitance(Coss)	286pF
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
Pd - Power Dissipation	108W
Reverse Transfer Capacitance (Crss@Vds)	257pF
RDS(on)	6mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.136nF
Gate Charge(Qg)	90nC@10V
Type	N-Channel