KIA Semicon Tech KND3080
| Manufacturer | KIA Semicon TechAsian Brands |
| MPN | KND3080 |
| LCSC Part # | C49328624 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 80A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KIA Semicon Tech | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 80A | |
| Output Capacitance(Coss) | 188pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 53W | |
| RDS(on) | 4.3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 25nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-Channel logic level enhancement mode power MOSFET
- RDS(ON) = 4.3 mΩ (typical) @ VGS = 10V
- Ultra-low gate charge
- Green (RoHS compliant) devices available
- Excellent CdV/dt immunity
- 100% tested for ΔVds
- 100% tested for UIS
In-Stock: 1,600
1,600 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0752 | $ 0.75 |
| 100+ | $ 0.0599 | $ 5.99 |
| 300+ | $ 0.0523 | $ 15.69 |
| 2,500+ | $ 0.0466 | $ 116.50 |
| 5,000+ | $ 0.042 | $ 210.00 |
| 10,000+ | $ 0.0397 | $ 397.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KIA Semicon Tech | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 80A | |
| Output Capacitance(Coss) | 188pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 53W | |
| RDS(on) | 4.3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.5nF | |
| Gate Charge(Qg) | 25nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-Channel logic level enhancement mode power MOSFET
- RDS(ON) = 4.3 mΩ (typical) @ VGS = 10V
- Ultra-low gate charge
- Green (RoHS compliant) devices available
- Excellent CdV/dt immunity
- 100% tested for ΔVds
- 100% tested for UIS
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
