XNRUSEMI XRS120P10H
| Manufacturer | XNRUSEMIAsian Brands |
| MPN | XRS120P10H |
| LCSC Part # | C49318510 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | 100V 120A 3V 300W 11mΩ@10V 1 P-Channel P-Channel TO-247 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | TO-247 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 798pF | |
| Current - Continuous Drain(Id) | 120A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 111.2pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 9.349nF | |
| Gate Charge(Qg) | 136nC@50V | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Split-gate trench MOSFET technology
- Superior thermal dissipation package
- High-density cell design for low R<sub>DS(ON)</sub>
Applications
AI Translation
- Battery switch applications
- Hard switching and high-frequency circuits
- Power management
In-Stock: 9
9 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0427 | $ 1.04 |
| 10+ | $ 1.0185 | $ 10.19 |
| 30+ | $ 1.0039 | $ 30.12 |
| 90+ | $ 0.9878 | $ 88.90 |
Standard Packaging30/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | TO-247 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 798pF | |
| Current - Continuous Drain(Id) | 120A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 111.2pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 9.349nF | |
| Gate Charge(Qg) | 136nC@50V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Split-gate trench MOSFET technology
- Superior thermal dissipation package
- High-density cell design for low R<sub>DS(ON)</sub>
Applications
AI Translation
- Battery switch applications
- Hard switching and high-frequency circuits
- Power management
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



