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HXY MOSFET DMP3021SSS-13-HXY product image
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HXY MOSFET DMP3021SSS-13-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
DMP3021SSS-13-HXY
LCSC Part #
C49256512
Packaging
SOP-8
Customer #
Key Attributes
MOSFET P-CH 30V 12A SOP-8
Datasheetpdf iconHXY MOSFET DMP3021SSS-13-HXY
In-Stock: 195
195 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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QtyUnit PriceTotal Amount
1+$ 0.4475$ 0.3580$ 0.36
10+$ 0.3523$ 0.2819$ 2.82
30+$ 0.311$ 0.2488$ 7.46
100+$ 0.2587$ 0.2070$ 20.70
500+$ 0.2364$ 0.1892$ 94.60
1,000+$ 0.2222$ 0.1778$ 177.80
Standard Packaging3000/Full Reel

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOP-8
ConfigurationStandalone
Drain to Source Voltage30V
Current - Continuous Drain(Id)12A
Output Capacitance(Coss)233pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)206pF
RDS(on)10mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.77nF
Gate Charge(Qg)22nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

DMP3021SSS - 13 utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications. Available in SOP-8 package.

Features

AI Translation
  • Drain-source voltage (VDS) = -30V, drain current (ID) = -12A
  • On-resistance (RDS(ON)) < 15mΩ at gate-source voltage (VGS) = 10V
  • P-channel MOSFET

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply