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HXY MOSFET SI4431DY-HXY product image
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HXY MOSFET SI4431DY-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
SI4431DY-HXY
LCSC Part #
C49256424
Packaging
SOP-8
Customer #
Key Attributes
MOSFET P-CH 30V 5.8A SOP-8
Datasheetpdf iconHXY MOSFET SI4431DY-HXY
In-Stock: 175
175 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2717$ 1.36
50+$ 0.2143$ 10.72
150+$ 0.1897$ 28.46
500+$ 0.159$ 79.50
3,000+$ 0.1453$ 435.90
6,000+$ 0.1371$ 822.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOP-8
ConfigurationStandalone
Drain to Source Voltage30V
Current - Continuous Drain(Id)5.8A
Output Capacitance(Coss)130pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)43mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)520pF
Gate Charge(Qg)11nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The SI4431DY utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation down to 2.5V gate voltage. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • VDS = -30V ID = -5.8A
  • RDS(ON) < 55mΩ @ VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply