HXY MOSFET IXTH4N150-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	IXTH4N150-HXY
LCSC Part #	C49241792
Packaging	TO-3PF
Customer #
Key Attributes	SiC Power MOSFET N-Channel Enhancement Mode
Datasheet	HXY MOSFET IXTH4N150-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-3PF
Drain to Source Voltage	1.5kV
Output Capacitance(Coss)	16pF
Current - Continuous Drain(Id)	3.7A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	35W
RDS(on)	1.5Ω
Reverse Transfer Capacitance (Crss@Vds)	6pF
Number	1 N-channel
Input Capacitance(Ciss)	184pF
Gate Charge(Qg)	14nC
Type	N-Channel

In-Stock: 20

20 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 0.556	$ 0.56
10+	$ 0.5446	$ 5.45
30+	$ 0.5348	$ 16.04
90+	$ 0.5267	$ 47.40
Standard Packaging30/Full Tube

Better price for more quantity?

$

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-3PF
Drain to Source Voltage	1.5kV
Output Capacitance(Coss)	16pF
Current - Continuous Drain(Id)	3.7A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	35W
RDS(on)	1.5Ω
Reverse Transfer Capacitance (Crss@Vds)	6pF
Number	1 N-channel
Input Capacitance(Ciss)	184pF
Gate Charge(Qg)	14nC
Type	N-Channel