HXY MOSFET IXTQ3N150M-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	IXTQ3N150M-HXY
LCSC Part #	C49241790
Packaging	TO-3PF
Customer #
Key Attributes	SiC Power MOSFET N-Channel Enhancement Mode
Datasheet	HXY MOSFET IXTQ3N150M-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-3PF
Drain to Source Voltage	1.5kV
Output Capacitance(Coss)	16pF
Current - Continuous Drain(Id)	3.7A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	35W
RDS(on)	1.5Ω
Reverse Transfer Capacitance (Crss@Vds)	6pF
Number	1 N-channel
Input Capacitance(Ciss)	184pF
Gate Charge(Qg)	14nC
Type	N-Channel

In-Stock: 5

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Qty	Unit Price	Total Amount
1+	$ 3.2161$ 2.7337	$ 2.73
10+	$ 2.7359$ 2.3256	$ 23.26
30+	$ 2.4511$ 2.0835	$ 62.51
90+	$ 2.163$ 1.8386	$ 165.47
510+	$ 2.0296$ 1.7252	$ 879.85
990+	$ 1.9694$ 1.6740	$ 1657.26
Standard Packaging30/Full Tube

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-3PF
Drain to Source Voltage	1.5kV
Output Capacitance(Coss)	16pF
Current - Continuous Drain(Id)	3.7A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	35W
RDS(on)	1.5Ω
Reverse Transfer Capacitance (Crss@Vds)	6pF
Number	1 N-channel
Input Capacitance(Ciss)	184pF
Gate Charge(Qg)	14nC
Type	N-Channel