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DOINGTER NTD5867NLT4G-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
NTD5867NLT4G-DO
LCSC Part #
C49237810
Packaging
TO-236
Customer #
Key Attributes
MOSFET N-CH 60V 20A TO-236
Datasheetpdf iconDOINGTER NTD5867NLT4G-DO
In-Stock: 920
920 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0742$ 0.74
100+$ 0.059$ 5.90
300+$ 0.0514$ 15.42
2,500+$ 0.0457$ 114.25
5,000+$ 0.0411$ 205.50
10,000+$ 0.0388$ 388.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-236
Drain to Source Voltage60V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation31W
RDS(on)26mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)45.3pF
Number1 N-channel
Input Capacitance(Ciss)1.15nF
Gate Charge(Qg)20.3nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 60 V, ID = 20 A, RDS(ON) < 36 mΩ at VGS = 10 V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell-density trench technology for ultra-low RDS(ON)
  • Excellent package thermal dissipation performance