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DOINGTER IRLR3410-DO
| Manufacturer | DOINGTERAsian Brands |
| MPN | IRLR3410-DO |
| LCSC Part # | C49237806 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 15A TO-252 |
| Datasheet |  DOINGTER IRLR3410-DO |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 51pF | |
| Current - Continuous Drain(Id) | 15A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 46W | |
| RDS(on) | 75mΩ@10V;85mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.083nF | |
| Gate Charge(Qg) | 6nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 100 V, ID = 15 A, RDS(ON) < 100 mΩ at VGS = 10 V
- Low gate charge.
- Eco-friendly devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Thermally efficient package.
In-Stock: 1,615
1,615 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0837 | $ 0.42 |
| 50+ | $ 0.0666 | $ 3.33 |
| 150+ | $ 0.058 | $ 8.70 |
| 500+ | $ 0.0515 | $ 25.75 |
| 2,500+ | $ 0.0464 | $ 116.00 |
| 5,000+ | $ 0.0438 | $ 219.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 51pF | |
| Current - Continuous Drain(Id) | 15A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 46W | |
| RDS(on) | 75mΩ@10V;85mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.083nF | |
| Gate Charge(Qg) | 6nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 100 V, ID = 15 A, RDS(ON) < 100 mΩ at VGS = 10 V
- Low gate charge.
- Eco-friendly devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Thermally efficient package.
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |