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DOINGTER FDD6635-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
FDD6635-DO
LCSC Part #
C49237743
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 40V 60A TO-252
Datasheetpdf iconDOINGTER FDD6635-DO
In-Stock: 2,445
2,445 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1087$ 0.54
50+$ 0.0866$ 4.33
150+$ 0.0755$ 11.33
500+$ 0.0673$ 33.65
2,500+$ 0.0606$ 151.50
5,000+$ 0.0573$ 286.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage40V
Output Capacitance(Coss)188pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation47W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)5.6mΩ@10V;7.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.38nF
Gate Charge(Qg)35nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 40 V, ID = 60 A, RDS(ON) < 6.5 mΩ (at VGS = 10 V)
  • Low gate charge.
  • Eco-friendly device options available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package with superior thermal performance.