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DOINGTER SPD30P06PGB-DO product image
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DOINGTER SPD30P06PGB-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
SPD30P06PGB-DO
LCSC Part #
C49237738
Packaging
TO-252
Customer #
Key Attributes
MOSFET P-CH 60V 30A TO-252
Datasheetpdf iconDOINGTER SPD30P06PGB-DO
In-Stock: 640
640 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2326$ 1.16
50+$ 0.1843$ 9.22
150+$ 0.1636$ 24.54
500+$ 0.1377$ 68.85
2,500+$ 0.1262$ 315.50
5,000+$ 0.1193$ 596.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)30A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)26mΩ@10V;32mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.535nF
Gate Charge(Qg)46nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = -60 V, ID = -30 A, RDS(ON) < 35 mΩ (at VGS = -10 V)
  • Low gate charge.
  • RoHS-compliant devices available.
  • Advanced high cell-density trench technology for ultra-low RDS(ON).
  • High-quality package with excellent thermal dissipation.