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DOINGTER STD10P6F6-DO product image
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DOINGTER STD10P6F6-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
STD10P6F6-DO
LCSC Part #
C49208681
Packaging
TO-252
Customer #
Key Attributes
MOSFET P-CH 60V 13A TO-252
Datasheetpdf iconDOINGTER STD10P6F6-DO
In-Stock: 1,865
1,865 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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QtyUnit PriceTotal Amount
5+$ 0.117$ 0.59
50+$ 0.0922$ 4.61
150+$ 0.0797$ 11.96
500+$ 0.0704$ 35.20
2,500+$ 0.063$ 157.50
5,000+$ 0.0592$ 296.00
Standard Packaging2500/Full Reel

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Current - Continuous Drain(Id)13A
Output Capacitance(Coss)72pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation36W
RDS(on)80mΩ@10V;95mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)49pF
Number1 P-Channel
Input Capacitance(Ciss)1.079nF
Gate Charge(Qg)11.7nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage (VDS) = -60 V, drain current (ID) = -13 A, on-resistance (RDS(ON)) < 90 mΩ at gate-source voltage (VGS) = -10 V
  • Low gate charge
  • Eco-friendly devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package with superior thermal dissipation

Applications

AI Translation
  • Load/Power Switch - Interface Switch - Ultra-compact Portable Device Battery Management - Electronic Equipment - Logic Level Translation