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DOINGTER NTD20N06T4G-DO product image
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DOINGTER NTD20N06T4G-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
NTD20N06T4G-DO
LCSC Part #
C49208678
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 60V 20A TO-252
Datasheetpdf iconDOINGTER NTD20N06T4G-DO
In-Stock: 2,300
2,300 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0875$ 0.44
50+$ 0.0697$ 3.49
150+$ 0.0608$ 9.12
500+$ 0.0542$ 27.10
2,500+$ 0.0488$ 122.00
5,000+$ 0.0461$ 230.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation31W
RDS(on)26mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)45.3pF
Number1 N-channel
Input Capacitance(Ciss)1.15nF
Gate Charge(Qg)20.3nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 60 V, drain current (ID) = 20 A, on-resistance (RDS(ON)) < 36 mΩ at gate-source voltage (VGS) = 10 V
  • Low gate charge.
  • RoHS-compliant devices available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package thermal dissipation performance.

Applications

AI Translation
  • Load/Power Switch - Interface Switch - Ultra-compact Portable Device Battery Management - Electronic Equipment - Logic Level Translation