DOINGTER NTD20N06T4G-DO
| Manufacturer | DOINGTERAsian Brands |
| MPN | NTD20N06T4G-DO |
| LCSC Part # | C49208678 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 20A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 31W | |
| RDS(on) | 26mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 45.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.15nF | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 60 V, drain current (ID) = 20 A, on-resistance (RDS(ON)) < 36 mΩ at gate-source voltage (VGS) = 10 V
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package thermal dissipation performance.
Applications
AI Translation
- Load/Power Switch - Interface Switch - Ultra-compact Portable Device Battery Management - Electronic Equipment - Logic Level Translation
In-Stock: 2,300
2,300 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0875 | $ 0.44 |
| 50+ | $ 0.0697 | $ 3.49 |
| 150+ | $ 0.0608 | $ 9.12 |
| 500+ | $ 0.0542 | $ 27.10 |
| 2,500+ | $ 0.0488 | $ 122.00 |
| 5,000+ | $ 0.0461 | $ 230.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 20A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 31W | |
| RDS(on) | 26mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 45.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.15nF | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 60 V, drain current (ID) = 20 A, on-resistance (RDS(ON)) < 36 mΩ at gate-source voltage (VGS) = 10 V
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package thermal dissipation performance.
Applications
AI Translation
- Load/Power Switch - Interface Switch - Ultra-compact Portable Device Battery Management - Electronic Equipment - Logic Level Translation
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



