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DOINGTER NTD24N06LT4G-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
NTD24N06LT4G-DO
LCSC Part #
C49208677
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 60V 30A TO-252
Datasheetpdf iconDOINGTER NTD24N06LT4G-DO
In-Stock: 175
175 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.0927$ 0.46
50+$ 0.0735$ 3.68
150+$ 0.0639$ 9.59
500+$ 0.0567$ 28.35
2,500+$ 0.051$ 127.50
5,000+$ 0.0481$ 240.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)80pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)21mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.05nF
Gate Charge(Qg)25nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) at low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 60 V, ID = 30 A, RDS(ON) < 30 mΩ (at VGS = 10 V)
  • Low gate charge.
  • RoHS-compliant devices available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package with superior thermal performance.