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DOINGTER NTD25P03L-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
NTD25P03L-DO
LCSC Part #
C49208675
Packaging
TO-252
Customer #
Key Attributes
MOSFET P-CH 30V 40A TO-252
Datasheetpdf iconDOINGTER NTD25P03L-DO
In-Stock: 1,430
1,430 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1296$ 0.1102$ 0.55
50+$ 0.1087$ 0.0924$ 4.62
150+$ 0.0983$ 0.0836$ 12.54
500+$ 0.0904$ 0.0769$ 38.45
2,500+$ 0.0842$ 0.0716$ 179.00
5,000+$ 0.081$ 0.0689$ 344.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage30V
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)159pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation39W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)144pF
Number1 P-Channel
Input Capacitance(Ciss)1.229nF
Gate Charge(Qg)26.3nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = -30 V, ID = -40 A, RDS(ON) < 14.5 mΩ at VGS = -10 V
  • Low gate charge.
  • Eco-friendly device options available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • High-quality package with excellent thermal dissipation.