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DOINGTER STD100N10F7-DO product image
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DOINGTER STD100N10F7-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
STD100N10F7-DO
LCSC Part #
C49208673
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 100V 85A TO-252
Datasheetpdf iconDOINGTER STD100N10F7-DO
In-Stock: 1,130
1,130 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3025$ 1.51
50+$ 0.2369$ 11.85
150+$ 0.2088$ 31.32
500+$ 0.1737$ 86.85
2,500+$ 0.1581$ 395.25
5,000+$ 0.1487$ 743.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage100V
Output Capacitance(Coss)1.319nF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation120W
RDS(on)6.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)44pF
Number1 N-channel
Input Capacitance(Ciss)2.399nF
Gate Charge(Qg)44nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET employs advanced SGT technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications.

Features

AI Translation
  • VDS = 100 V, ID = 85 A, RDS(ON) < 7.5 mΩ (at VGS = 10 V), (typical: 6.4 mΩ)
  • Low gate charge.
  • RoHS-compliant devices available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package thermal dissipation performance.