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DOINGTER FDD86567-F085-DO

Manufacturer
DOINGTERAsian Brands
MPN
FDD86567-F085-DO
LCSC Part #
C49208672
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 60V 130A TO-252
DatasheetDOINGTER FDD86567-F085-DO
RoHS Compliance2 documents available
Alternative Parts3
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)1.666nF
Current - Continuous Drain(Id)130A
Ciss-Input Capacitance5.377nF
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss)77.7pF
RDS(on)3mΩ@10V
Number1 N-channel
Gate Charge(Qg)66.1nC@10V
Gate Threshold Voltage (Vgs(th))2.5V
TypeN-Channel
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Introduction

AI Translation

This N-channel MOSFET employs advanced SGT technology and design, delivering excellent RDS(ON) performance with low gate charge, suitable for a wide range of applications.

Features

AI Translation
  • VDS = 60 V, ID = 130 A, RDS(ON) < 3.5 mΩ (at VGS = 10 V), typical 3 mΩ
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell-density trench technology for ultra-low RDS(ON)
  • Excellent package thermal dissipation performance