LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
DOINGTER FDD86567-F085-DO product image
  • FDD86567-F085-DO thumbnail 1
  • FDD86567-F085-DO thumbnail 2
  • FDD86567-F085-DO thumbnail 3
  • Pinout
  • Footprint
Images for reference only

DOINGTER FDD86567-F085-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
FDD86567-F085-DO
LCSC Part #
C49208672
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 60V 130A TO-252
Datasheetpdf iconDOINGTER FDD86567-F085-DO
In-Stock: 1,001
1,001 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
Notify Me
QtyUnit PriceTotal Amount
1+$ 0.4173$ 0.42
10+$ 0.3668$ 3.67
30+$ 0.344$ 10.32
100+$ 0.3179$ 31.79
500+$ 0.3065$ 153.25
1,000+$ 0.2983$ 298.30
Standard Packaging2500/Full Reel

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Output Capacitance(Coss)1.666nF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)77.7pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.377nF
Gate Charge(Qg)66.1nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET employs advanced SGT technology and design, delivering excellent RDS(ON) performance with low gate charge, suitable for a wide range of applications.

Features

AI Translation
  • VDS = 60 V, ID = 130 A, RDS(ON) < 3.5 mΩ (at VGS = 10 V), typical 3 mΩ
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell-density trench technology for ultra-low RDS(ON)
  • Excellent package thermal dissipation performance