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DOINGTER IPD30N10S3L34A-DO product image
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DOINGTER IPD30N10S3L34A-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
IPD30N10S3L34A-DO
LCSC Part #
C49208612
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 100V 30A TO-252
Datasheetpdf iconDOINGTER IPD30N10S3L34A-DO
In-Stock: 1,180
1,180 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.146$ 0.73
50+$ 0.1155$ 5.78
150+$ 0.1003$ 15.05
500+$ 0.0889$ 44.45
2,500+$ 0.0797$ 199.25
5,000+$ 0.0752$ 376.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)126pF
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)99pF
RDS(on)24mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.857nF
Gate Charge(Qg)13nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 100 V, drain current (ID) = 30 A, on-resistance (RDS(ON)) < 30 mΩ at gate-source voltage (VGS) = 10 V
  • Low gate charge
  • Available in eco-friendly versions
  • Advanced high cell-density trench technology for ultra-low RDS(ON)
  • Excellent package thermal dissipation performance