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DOINGTER IRFR3505-DO
| Manufacturer | DOINGTERAsian Brands |
| MPN | IRFR3505-DO |
| LCSC Part # | C49208611 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 55A TO-252 |
| Datasheet |  DOINGTER IRFR3505-DO |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 55A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 151pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.045nF | |
| Gate Charge(Qg) | 16nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 60 V, Drain Current (ID) = 55 A, On-State Resistance (RDS(ON)) < 12 mΩ at VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell-density trench technology for ultra-low RDS(ON)
- Excellent package with superior thermal dissipation
In-Stock: 2,445
2,445 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1183 | $ 0.59 |
| 50+ | $ 0.104 | $ 5.20 |
| 150+ | $ 0.0979 | $ 14.69 |
| 500+ | $ 0.0902 | $ 45.10 |
| 2,500+ | $ 0.0868 | $ 217.00 |
| 5,000+ | $ 0.0848 | $ 424.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 55A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 63W | |
| Reverse Transfer Capacitance (Crss@Vds) | 151pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.045nF | |
| Gate Charge(Qg) | 16nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 60 V, Drain Current (ID) = 55 A, On-State Resistance (RDS(ON)) < 12 mΩ at VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell-density trench technology for ultra-low RDS(ON)
- Excellent package with superior thermal dissipation
C49208611 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |