LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
DOINGTER IRLR7843-DO product image
  • IRLR7843-DO thumbnail 1
  • IRLR7843-DO thumbnail 2
  • IRLR7843-DO thumbnail 3
  • Pinout
  • Footprint
Images for reference only

DOINGTER IRLR7843-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
IRLR7843-DO
LCSC Part #
C49208603
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 30V 150A TO-252
Datasheetpdf iconDOINGTER IRLR7843-DO
In-Stock: 610
610 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.236$ 1.18
50+$ 0.187$ 9.35
150+$ 0.166$ 24.90
500+$ 0.1397$ 69.85
2,500+$ 0.1281$ 320.25
5,000+$ 0.121$ 605.00
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage30V
Output Capacitance(Coss)499pF
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation108W
Reverse Transfer Capacitance (Crss@Vds)430pF
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.499nF
Gate Charge(Qg)37nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 30 V, Drain Current (ID) = 150 A, RDS(ON) < 3.3 mΩ at VGS = 10 V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package thermal dissipation performance

Applications

AI Translation
  • DC-DC Converter