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JSMSEMI IRF7306TRPBF-JSM product image
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JSMSEMI IRF7306TRPBF-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
IRF7306TRPBF-JSM
LCSC Part #
C49206908
Packaging
SOP-8
Customer #
Key Attributes
MOSFET N-CH 30V 6.5A SOP-8
Datasheetpdf iconJSMSEMI IRF7306TRPBF-JSM
In-Stock: 4,330
4,330 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2551$ 1.28
50+$ 0.1997$ 9.99
150+$ 0.176$ 26.40
500+$ 0.1464$ 73.20
3,000+$ 0.1332$ 399.60
6,000+$ 0.1253$ 751.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOP-8
Drain to Source Voltage30V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)36mΩ@10V;50mΩ@4.5V
Number2 P-Channel
Input Capacitance(Ciss)625pF
Gate Charge(Qg)11.6nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

IRF7306 is an N-channel enhancement mode power MOSFET fabricated using advanced trench technology with high cell density. This high-density process is especially effective in minimizing on-resistance. These devices are particularly suited for power management DC-DC converters in low-voltage applications.

Features

AI Translation
  • -30V/-6.5A
  • RDS(ON) = 36mΩ (typ.) @ VGS = -10V
  • RDS(ON) = 50mΩ (typ.) @ VGS = -4.5V
  • Robust and reliable
  • Lead-free, RoHS-compliant devices available
  • P-Channel MOSFET

Applications

AI Translation
  • Power management in laptops, portable devices, and battery-powered systems