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TECH PUBLIC DMN2016UTS-TPRoHS

Manufacturer
TECH PUBLICAsian Brands
MPN
DMN2016UTS-TP
LCSC Part #
C49190797
Packaging
TSSOP-8
Customer #
Key Attributes
MOSFET 20V 7A TSSOP-8
Datasheetpdf iconTECH PUBLIC DMN2016UTS-TP
In-Stock: 500
500 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.195$ 0.98
50+$ 0.1521$ 7.61
150+$ 0.1338$ 20.07
500+$ 0.1108$ 55.40
2,500+$ 0.1006$ 251.50
5,000+$ 0.0945$ 472.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTECH PUBLIC
PackagingTSSOP-8
Drain to Source Voltage20V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)200pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)12mΩ@4.5V;15mΩ@2.5V
Number2 N-Channel
Input Capacitance(Ciss)956pF
Gate Charge(Qg)11.4nC@4.5V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = -40 V, ID = -23 A, RDS(ON) < 40 mΩ at VGS = -10 V
  • Low gate charge
  • Eco-friendly devices available
  • Advanced high cell-density trench technology for ultra-low RDS(ON)
  • Excellent package thermal performance

Applications

AI Translation
  • Battery Protection
  • Battery-Powered Systems
  • Power Management
  • Motor Control
  • Portable Power Adapters