TECH PUBLIC IRFS4410Z-TP
| Manufacturer | TECH PUBLICAsian Brands |
| MPN | IRFS4410Z-TP |
| LCSC Part # | C49190792 |
| Packaging | TO-263 |
| Customer # | |
| Key Attributes | MOSFET 100V 160A TO-263 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | TO-263 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 2.9nF | |
| Current - Continuous Drain(Id) | 160A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 180W | |
| RDS(on) | 3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.1nF | |
| Gate Charge(Qg) | 130nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 60 V, ID = 30 A, RDS(ON) < 30 mΩ at VGS = 10 V
- Low gate charge
- Eco-friendly devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- High-quality package with excellent thermal dissipation
Applications
AI Translation
- Motor Control & Drive
- Load Switch
- Power Management
- PWM Applications
In-Stock: 185
185 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9853 | $ 0.99 |
| 10+ | $ 0.7915 | $ 7.92 |
| 30+ | $ 0.6938 | $ 20.81 |
| 100+ | $ 0.5977 | $ 59.77 |
| 500+ | $ 0.5407 | $ 270.35 |
| 800+ | $ 0.5114 | $ 409.12 |
Standard Packaging800/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | TO-263 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 2.9nF | |
| Current - Continuous Drain(Id) | 160A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 180W | |
| RDS(on) | 3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.1nF | |
| Gate Charge(Qg) | 130nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 60 V, ID = 30 A, RDS(ON) < 30 mΩ at VGS = 10 V
- Low gate charge
- Eco-friendly devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- High-quality package with excellent thermal dissipation
Applications
AI Translation
- Motor Control & Drive
- Load Switch
- Power Management
- PWM Applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



