LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
TECH PUBLIC IRFS4410Z-TP product image
  • IRFS4410Z-TP thumbnail 1
  • IRFS4410Z-TP thumbnail 2
  • IRFS4410Z-TP thumbnail 3
  • Pinout
  • Footprint
Images for reference only

TECH PUBLIC IRFS4410Z-TPRoHS

Manufacturer
TECH PUBLICAsian Brands
MPN
IRFS4410Z-TP
LCSC Part #
C49190792
Packaging
TO-263
Customer #
Key Attributes
MOSFET 100V 160A TO-263
Datasheetpdf iconTECH PUBLIC IRFS4410Z-TP
In-Stock: 185
185 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.9853$ 0.99
10+$ 0.7915$ 7.92
30+$ 0.6938$ 20.81
100+$ 0.5977$ 59.77
500+$ 0.5407$ 270.35
800+$ 0.5114$ 409.12
Standard Packaging800/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTECH PUBLIC
PackagingTO-263
Drain to Source Voltage100V
Output Capacitance(Coss)2.9nF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation180W
RDS(on)3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)340pF
Number1 N-channel
Input Capacitance(Ciss)6.1nF
Gate Charge(Qg)130nC@10V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 60 V, ID = 30 A, RDS(ON) < 30 mΩ at VGS = 10 V
  • Low gate charge
  • Eco-friendly devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • High-quality package with excellent thermal dissipation

Applications

AI Translation
  • Motor Control & Drive
  • Load Switch
  • Power Management
  • PWM Applications