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DOINGTER NTD20P06LT4G-DO product image
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DOINGTER NTD20P06LT4G-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
NTD20P06LT4G-DO
LCSC Part #
C49190268
Packaging
TO-252
Customer #
Key Attributes
MOSFET P-CH 60V 20A TO-252
Datasheetpdf iconDOINGTER NTD20P06LT4G-DO
In-Stock: 2,855
2,855 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1352$ 0.68
50+$ 0.1077$ 5.39
150+$ 0.094$ 14.10
500+$ 0.0837$ 41.85
2,500+$ 0.0754$ 188.50
5,000+$ 0.0713$ 356.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Output Capacitance(Coss)725pF
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)560pF
RDS(on)68mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.961nF
Gate Charge(Qg)82.32nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = -60 V, ID = -20 A, RDS(ON) < 68 mΩ at VGS = -10 V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package thermal dissipation performance