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DOINGTER NTD5807NT4G-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
NTD5807NT4G-DO
LCSC Part #
C49190265
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 40V 25A TO-252
Datasheetpdf iconDOINGTER NTD5807NT4G-DO
In-Stock: 2,110
2,110 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0659$ 0.66
100+$ 0.0525$ 5.25
300+$ 0.0458$ 13.74
2,500+$ 0.0408$ 102.00
5,000+$ 0.0368$ 184.00
10,000+$ 0.0347$ 347.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage40V
Current - Continuous Drain(Id)25A
Output Capacitance(Coss)70pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation26W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)500pF
Gate Charge(Qg)3.5nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 40 V, drain current (ID) = 25 A, on-resistance (RDS(ON)) < 25 mΩ at gate-source voltage (VGS) = 10 V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell-density trench technology for ultra-low RDS(ON)
  • Excellent package thermal dissipation performance