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Bestirpower BCW120N80M1RoHS

Manufacturer
BestirpowerAsian Brands
MPN
BCW120N80M1
LCSC Part #
C49164814
Packaging
TO-247-3
Customer #
Key Attributes
N-Channel Silicon Carbide Power MOSFET
Datasheetpdf iconBestirpower BCW120N80M1
In-Stock: 85
85 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.2955$ 2.30
10+$ 1.9515$ 19.52
30+$ 1.7363$ 52.09
90+$ 1.5162$ 136.46
510+$ 1.4168$ 722.57
990+$ 1.3727$ 1358.97
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerBestirpower
PackagingTO-247-3
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)65pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)80mΩ
Number1 N-channel
Input Capacitance(Ciss)885pF
Gate Charge(Qg)50nC
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece