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ElecSuper TPN2R703NL,L1Q(ES) product image
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ElecSuper TPN2R703NL,L1Q(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
TPN2R703NL,L1Q(ES)
LCSC Part #
C49108772
Packaging
PDFN-8L(3x3)
Customer #
Key Attributes
MOSFET N-CH 30V 80A PDFN-8L(3x3)
Datasheetpdf iconElecSuper TPN2R703NL,L1Q(ES)
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.6254$ 0.63
10+$ 0.5036$ 5.04
30+$ 0.4516$ 13.55
100+$ 0.385$ 38.50
500+$ 0.3558$ 177.90
1,000+$ 0.3395$ 339.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN-8L(3x3)
Drain to Source Voltage30V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)442pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation33.7W
Reverse Transfer Capacitance (Crss@Vds)340pF
RDS(on)2.4mΩ@10V;3.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.767nF
Gate Charge(Qg)67nC@10V
TypeN-Channel
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Introduction

AI Translation

TPN2R703NL,L1Q(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product TPN2R703NL,L1Q(ES) is lead-free.

Features

AI Translation
  • 30V, RDS(ON) = 2.4 mΩ (typical), VGS = 10V
  • RDS(ON) = 3.6 mΩ (typical), VGS = 4.5V
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and durable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion