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ElecSuper IPB042N10N3G(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
IPB042N10N3G(ES)
LCSC Part #
C49108761
Packaging
TO-263
Customer #
Key Attributes
MOSFET N-CH 85V 120A TO-263
Datasheetpdf iconElecSuper IPB042N10N3G(ES)
In-Stock: 55
55 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7084$ 0.71
10+$ 0.5754$ 5.75
30+$ 0.5089$ 15.27
100+$ 0.4424$ 44.24
500+$ 0.4022$ 201.10
800+$ 0.3821$ 305.68
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingTO-263
Drain to Source Voltage85V
Output Capacitance(Coss)1.002nF
Current - Continuous Drain(Id)120A
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation179W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)3.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.862nF
Gate Charge(Qg)118nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

IPB042N10N3G(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced shielded gate trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IPB042N10N3G(ES) is lead-free.

Features

AI Translation
  • 85V, RDS(ON) = 3.1 mΩ (typical) @ VGS = 10V
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion