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ElecSuper NTR4101PT1G(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
NTR4101PT1G(ES)
LCSC Part #
C49108757
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 3.3A SOT-23
Datasheetpdf iconElecSuper NTR4101PT1G(ES)
In-Stock: 1,590
1,590 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0696$ 0.70
100+$ 0.0548$ 5.48
300+$ 0.0474$ 14.22
3,000+$ 0.0418$ 125.40
6,000+$ 0.0373$ 223.80
9,000+$ 0.0351$ 315.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)3.3A
Gate Threshold Voltage (Vgs(th))620mV
Pd - Power Dissipation900mW
RDS(on)36mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)52pF
Number1 P-Channel
Input Capacitance(Ciss)430pF
Gate Charge(Qg)4.3nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

NTR4101PT1G(ES) is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product NTR4101PT1G(ES) is lead-free.

Features

AI Translation
  • -20V, RDS(ON) = 36 mΩ (typ) at VGS = -4.5 V
  • RDS(ON) = 50 mΩ (typ) at VGS = -2.5 V
  • RDS(ON) = 72 mΩ (typ) at VGS = -1.8 V
  • Fast switching
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion