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R+O HT10N2H8SRoHS

Manufacturer
R+OAsian Brands
MPN
HT10N2H8S
LCSC Part #
C49066911
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 100V 3A SOT-223
Datasheetpdf iconR+O HT10N2H8S
In-Stock: 24,735
24,735 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.3155$ 1.58
50+$ 0.2499$ 12.50
150+$ 0.2218$ 33.27
500+$ 0.1868$ 93.40
2,500+$ 0.1712$ 428.00
5,000+$ 0.1618$ 809.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingSOT-223
Drain to Source Voltage100V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)140mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)650pF
Gate Charge(Qg)20nC@10V
TypeN-Channel
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Features

AI Translation
  • Drain-Source Voltage (VDS) = 100 V
  • Drain Current (ID) = 3 A
  • On-State Resistance (RDS(on)) < 200 mΩ at Gate-Source Voltage (VGS) = 10 V
  • On-State Resistance (RDS(on)) < 220 mΩ at Gate-Source Voltage (VGS) = 4.5 V
  • High power and high current handling capability
  • Voltage-controlled small-signal switching
  • Fast switching speed

Applications

AI Translation
  • Power switch applications
  • Hard switching and high-frequency circuits
  • Uninterruptible power supplies