LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
R+O HT06P460S product image
  • HT06P460S thumbnail 1
  • HT06P460S thumbnail 2
  • HT06P460S thumbnail 3
  • Pinout
  • Footprint
Images for reference only

R+O HT06P460SRoHS

Manufacturer
R+OAsian Brands
MPN
HT06P460S
LCSC Part #
C49066909
Packaging
SOT-223
Customer #
Key Attributes
MOSFET P-CH 60V 8A SOT-223
Datasheetpdf iconR+O HT06P460S
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit Price(Reference Only)Total Amount
1+$ 0.4972$ 0.50
10+$ 0.4046$ 4.05
30+$ 0.3656$ 10.97
100+$ 0.3152$ 31.52
500+$ 0.2941$ 147.05
1,000+$ 0.2811$ 281.10
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingSOT-223
Drain to Source Voltage60V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)26mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.15nF
Gate Charge(Qg)37.6nC@10V
TypeP-Channel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

GT045N10Q utilizes advanced trench technology, featuring excellent on-resistance RDS(ON) and low gate charge, making it suitable for a wide range of applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = -60 V
  • Drain Current (ID) = -8 A
  • On-Resistance (RDS(on)) < 46 mΩ at Gate-Source Voltage (VGS) = -10 V
  • On-Resistance (RDS(on)) < 52 mΩ at Gate-Source Voltage (VGS) = -4.5 V
  • High power and high current handling capability
  • High-density cell design for ultra-low on-resistance (Rdson)
  • Excellent package with superior thermal dissipation performance

Applications

AI Translation
  • Battery protection
  • Load switch
  • Power management