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R+O HT06P1H3S product image
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R+O HT06P1H3SRoHS

Manufacturer
R+OAsian Brands
MPN
HT06P1H3S
LCSC Part #
C49066908
Packaging
SOT-223
Customer #
Key Attributes
MOSFET P-CH 60V 4.3A SOT-223
Datasheetpdf iconR+O HT06P1H3S
In-Stock: 7,030
7,030 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2655$ 1.33
50+$ 0.2334$ 11.67
150+$ 0.2196$ 32.94
500+$ 0.2024$ 101.20
2,500+$ 0.1948$ 487.00
5,000+$ 0.1902$ 951.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingSOT-223
Drain to Source Voltage60V
Current - Continuous Drain(Id)4.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.1W
RDS(on)90mΩ@10V;125mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)35pF
Number1 P-Channel
Input Capacitance(Ciss)1nF
Gate Charge(Qg)25nC@10V
TypeP-Channel
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Features

AI Translation
  • Drain-Source Voltage (VDS) = -60 V
  • Drain Current (ID) = -4.3 A
  • On-Resistance (RDS(on)) < 130 mΩ at VGS = -10 V
  • On-Resistance (RDS(on)) < 190 mΩ at VGS = -4.5 V
  • High power and large current handling capability
  • High-density cell design for ultra-low on-resistance
  • Excellent package with superior thermal performance

Applications

AI Translation
  • Battery protection
  • Load switch
  • Power management