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R+O HT04N200SRoHS

Manufacturer
R+OAsian Brands
MPN
HT04N200S
LCSC Part #
C49066901
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 40V 9A SOT-223
Datasheetpdf iconR+O HT04N200S
In-Stock: 18,830
18,830 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.3713$ 1.86
50+$ 0.2942$ 14.71
150+$ 0.2611$ 39.17
500+$ 0.2198$ 109.90
2,500+$ 0.2014$ 503.50
5,000+$ 0.1904$ 952.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingSOT-223
Drain to Source Voltage40V
Output Capacitance(Coss)121pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)111pF
RDS(on)11mΩ@10V;13mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)26nC@10V
TypeN-Channel
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Features

AI Translation
  • Drain-source voltage (VDS) = 40 V
  • Drain current (ID) = 9 A
  • On-resistance (RDS(on)) < 20 mΩ at gate-source voltage (VGS) = 10 V
  • On-resistance (RDS(on)) < 25 mΩ at gate-source voltage (VGS) = 4.5 V
  • High power and large current handling capability
  • Voltage-controlled small-signal switching
  • Fast switching speed

Applications

AI Translation
  • Battery protection
  • Load switch
  • Power management