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R+O HT03N270SRoHS

Manufacturer
R+OAsian Brands
MPN
HT03N270S
LCSC Part #
C49066898
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 30V 8A SOT-223
Datasheetpdf iconR+O HT03N270S
In-Stock: 5,740
5,740 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.2255$ 1.13
50+$ 0.1982$ 9.91
150+$ 0.1865$ 27.98
500+$ 0.1719$ 85.95
2,500+$ 0.1654$ 413.50
5,000+$ 0.1615$ 807.50
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingSOT-223
Drain to Source Voltage30V
Output Capacitance(Coss)109.4pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)93.8pF
RDS(on)10mΩ@10V;14mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)784pF
Gate Charge(Qg)19.4nC@10V
TypeN-Channel
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Introduction

AI Translation

3011A is an N-channel logic-level enhancement-mode power MOSFET fabricated using advanced trench technology with high cell density. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suitable for low-voltage applications where low in-line power dissipation is required in very compact SMT packages.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 30 V
  • Drain Current (ID) = 8 A
  • On-Resistance (RDS(on)) < 15 mΩ at Gate-Source Voltage (VGS) = 10 V
  • On-Resistance (RDS(on)) < 25 mΩ at Gate-Source Voltage (VGS) = 4.5 V
  • High power and high current handling capability
  • Voltage-controlled small-signal switching
  • Fast switching speed

Applications

AI Translation
  • Battery protection
  • Load switch
  • Power management