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WXNSIC NSG2066 product image
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WXNSIC NSG2066RoHS

Manufacturer
WXNSICAsian Brands
MPN
NSG2066
LCSC Part #
C49023244
Packaging
TSSOP-20
Customer #
Key Attributes
Three-phase gate driver IC with integrated bootstrap
Datasheetpdf iconWXNSIC NSG2066
In-Stock: 1,783
1,783 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.2948$ 0.29
10+$ 0.2557$ 2.56
30+$ 0.2394$ 7.18
100+$ 0.2199$ 21.99
500+$ 0.2101$ 105.05
1,000+$ 0.2052$ 205.20
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerWXNSIC
PackagingTSSOP-20
Input Logic Level - Low800mV
Low Level Delay Time150ns
High Level Delay Time150ns
Quiescent Current700uA
Input Logic Level - High2.5V
Operating Temperature-40℃~+125℃
Voltage - Supply5V~20V
Driven ConfigurationThree Phase
Current - Output Low(IOL)1.5A
Rise Time40ns
Fall Time15ns
FeaturesUnder Voltage Protection;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH)1.2A
Load TypeMOSFET;IGBT

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

NSG2066 is a three-phase high-voltage power MOSFET and IGBT gate driver capable of simultaneously driving the gates of both high-side and low-side power transistors. Its floating channel drive design supports bus voltages up to 250V. The device delivers strong output drive capability, with source and sink currents of 1.2A and 1.5A respectively. NSG2066 operates over a wide voltage range, with independently optimizable high-side and low-side gate drive voltages for improved drive efficiency. Internal shoot-through protection and dead-time circuitry prevent simultaneous conduction of both transistors, further reducing switching losses. The UVLO function ensures both driver outputs remain low when the supply voltage is insufficient. NSG2066 integrates bootstrap diodes to minimize external peripheral circuitry.

Features

AI Translation
  • Floating channel for bootstrap operation
  • Maximum operating voltage up to 250V
  • Gate drive voltage range: 5V~20V
  • Compatible with 3.3V/5V input logic
  • dv/dt immunity up to ±50V/ns
  • Vs negative bias capability: -9V
  • High-side input/output in-phase
  • Low-side input/output out-of-phase
  • Turn-on/turn-off propagation delay: Ton/Toff = 150ns/150ns, matched high- and low-side delays
  • Shoot-through protection, dead time: 200ns
  • High- and low-side UVLO, UVLO positive threshold: 4.5V, UVLO negative threshold: 4.3V
  • Output source/sink current capability: 1.2A/1.5A
  • Wide temperature range: -40~125℃
  • Integrated bootstrap diode
  • RoHS compliant
  • TSSOP20 package

Applications

AI Translation
  • Motor Control
  • Air Conditioner/Washing Machine
  • General-Purpose Inverter
  • Micro Inverter Drive