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JSMSEMI AO3416 product image
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JSMSEMI AO3416RoHS

Manufacturer
JSMSEMIAsian Brands
MPN
AO3416
LCSC Part #
C49012073
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 20V 6.5A SOT-23
Datasheetpdf iconJSMSEMI AO3416
In-Stock: 1,730
1,730 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0402$ 0.40
100+$ 0.0316$ 3.16
300+$ 0.0273$ 8.19
3,000+$ 0.0246$ 73.80
6,000+$ 0.0221$ 132.60
9,000+$ 0.0208$ 187.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)1.95nF
Current - Continuous Drain(Id)6.5A
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)155pF
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.12nF
Gate Charge(Qg)16nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

3416 is an N-channel logic-level enhancement-mode power MOSFET, manufactured using advanced trench technology with high cell density, featuring excellent RDS(ON). This high-density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications requiring low on-state power dissipation in ultra-compact SMT packages.

Features

AI Translation
  • 20V/6.5A, RDS(ON) = 16mΩ (typical) @VGS = 4.5V
  • 20V/5.5A, RDS(ON) = 18mΩ (typical) @VGS = 2.5V
  • Designed for ultra-low RDS(ON)
  • Excellent on-resistance and maximum DC current capability
  • Fully RoHS compliant
  • ESD rating: 2000V HBM
  • SOT23-3L package

Applications

AI Translation
  • Laptop power management
  • Portable devices
  • Battery-powered systems