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JSMSEMI AO4616RoHS

Manufacturer
JSMSEMIAsian Brands
MPN
AO4616
LCSC Part #
C49011183
Packaging
SOP-8
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 30V 8A 10A SOP-8
Datasheetpdf iconJSMSEMI AO4616
In-Stock: 6,110
6,110 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1269$ 0.63
50+$ 0.0995$ 4.98
150+$ 0.0859$ 12.89
500+$ 0.0756$ 37.80
3,000+$ 0.0674$ 202.20
6,000+$ 0.0633$ 379.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOP-8
Drain to Source Voltage30V
Output Capacitance(Coss)67pF;140pF
Current - Continuous Drain(Id)8A;10A
Gate Threshold Voltage (Vgs(th))1.8V;1.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)41pF;95pF
RDS(on)20mΩ@10V;15mΩ@10V
Input Capacitance(Ciss)373pF;760pF
Gate Charge(Qg)7.2nC@10V;13.6nC@10V
TypeN-Channel + P-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

AO4616 employs advanced trench technology MOSFETs, delivering excellent on-resistance RDS(ON) and low gate charge. The complementary MOSFETs are suitable for inverter and other applications.

Features

AI Translation
  • N-Channel
  • Drain-Source Voltage VDS = 30 V
  • Drain Current ID = 8 A (Gate-Source Voltage VGS = 10 V)
  • On-Resistance RDS(ON) < 20 mΩ (Gate-Source Voltage VGS = 10 V)
  • On-Resistance RDS(ON) < 30 mΩ (Gate-Source Voltage VGS = 4.5 V)
  • P-Channel
  • -30 V
  • -10 A (Gate-Source Voltage VGS = -10 V)
  • On-Resistance RDS(ON) < 20 mΩ (Gate-Source Voltage VGS = -10 V)
  • On-Resistance RDS(ON) < 30 mΩ (Gate-Source Voltage VGS = -4.5 V)
  • SOP-8L Package
  • 100% Unclamped Inductive Switching (UIS) Tested
  • 100% Gate Resistance (Rg) Tested

Applications

AI Translation
  • Load switch
  • PWM applications
  • Power management