BORN 2N7002DW
| Manufacturer | BORNAsian Brands |
| MPN | 2N7002DW |
| LCSC Part # | C49009904 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 300mA SOT-363 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | BORN | |
| Packaging | SOT-363 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 11pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 2.2Ω@10V;3.3Ω@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 28pF | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
- High-density cell design for low R<sub>DS(ON)</sub>
- Voltage-controlled small-signal switch
- High saturation current capability
- SOT-363 SMT package
- 2KV (HBM) ESD protection
Features
AI Translation
- VDS = 60 V
- ID = 0.3 A
- RDS(ON) max 2.2 Ω at VGS = 10 V
- RDS(ON) max 3.3 Ω at VGS = 4.5 V
In-Stock: 12,720
12,720 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0233 | $ 0.47 |
| 200+ | $ 0.0182 | $ 3.64 |
| 600+ | $ 0.0154 | $ 9.24 |
| 3,000+ | $ 0.0137 | $ 41.10 |
| 9,000+ | $ 0.0123 | $ 110.70 |
| 21,000+ | $ 0.0115 | $ 241.50 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | BORN | |
| Packaging | SOT-363 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 11pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 2.2Ω@10V;3.3Ω@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 28pF | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
- High-density cell design for low R<sub>DS(ON)</sub>
- Voltage-controlled small-signal switch
- High saturation current capability
- SOT-363 SMT package
- 2KV (HBM) ESD protection
Features
AI Translation
- VDS = 60 V
- ID = 0.3 A
- RDS(ON) max 2.2 Ω at VGS = 10 V
- RDS(ON) max 3.3 Ω at VGS = 4.5 V
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



