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HXY MOSFET STGWA100H65DFB2-HXY product image
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HXY MOSFET STGWA100H65DFB2-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
STGWA100H65DFB2-HXY
LCSC Part #
C49003309
Packaging
TO-247
Customer #
Key Attributes
429W 150A 650V TO-247 Single IGBTs RoHS
Datasheetpdf iconHXY MOSFET STGWA100H65DFB2-HXY
In-Stock: 40
40 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 5.5154$ 5.1294$ 5.13
10+$ 4.7657$ 4.4321$ 44.32
30+$ 4.3098$ 4.0082$ 120.25
90+$ 3.9268$ 3.6520$ 328.68
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerHXY MOSFET
PackagingTO-247
Td(off)195ns
Pd - Power Dissipation429W
Td(on)27ns
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)26pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@0.88mA
Vce Saturation(VCE(sat))1.45V@100A,15V
Reverse Recovery Time(trr)123ns
Switching Energy(Eoff)1.65mJ
Turn-On Energy (Eon)3.3mJ
Input Capacitance(Cies)3.452nF
Gate Charge(Qg)156nC@15V
Output Capacitance(Coes)223pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Features

AI Translation
  • 650V, 100A IGBT
  • High input impedance
  • Low saturation voltage Vce(sat)
  • Low switching losses
  • Low conduction losses for high efficiency
  • Robust transient reliability
  • Low EMI

Applications

AI Translation
  • Industrial UPS
  • Electric vehicle charging
  • String inverters
  • Welding