HXY MOSFET DMN2005UPS-13-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8(5x6)
Configuration	Standalone
Drain to Source Voltage	20V
Output Capacitance(Coss)	407pF
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	700mV
Pd - Power Dissipation	58W
Reverse Transfer Capacitance (Crss@Vds)	386pF
RDS(on)	3.5mΩ@4.5V
Number	1 N-channel
Input Capacitance(Ciss)	2.5nF
Gate Charge(Qg)	32nC@4.5V
Type	N-Channel

In-Stock: 98

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Qty	Unit Price	Total Amount
1+	$ 0.5014$ 0.4012	$ 0.40
10+	$ 0.3967$ 0.3174	$ 3.17
30+	$ 0.3523$ 0.2819	$ 8.46
100+	$ 0.2967$ 0.2374	$ 23.74
500+	$ 0.2713$ 0.2171	$ 108.55
1,000+	$ 0.2571$ 0.2057	$ 205.70
Standard Packaging5000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8(5x6)
Configuration	Standalone
Drain to Source Voltage	20V
Output Capacitance(Coss)	407pF
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	700mV
Pd - Power Dissipation	58W
Reverse Transfer Capacitance (Crss@Vds)	386pF
RDS(on)	3.5mΩ@4.5V
Number	1 N-channel
Input Capacitance(Ciss)	2.5nF
Gate Charge(Qg)	32nC@4.5V
Type	N-Channel