HXY MOSFET MSC750SMA170SA-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	MSC750SMA170SA-HXY
LCSC Part #	C48972191
Packaging	TO-263-7L
Customer #
Key Attributes	SiC Power MOSFET N-Channel Enhancement Mode
Datasheet	HXY MOSFET MSC750SMA170SA-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-263-7L
Drain to Source Voltage	1.7kV
Current - Continuous Drain(Id)	6.7A
Output Capacitance(Coss)	15.3pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4.5V
Pd - Power Dissipation	86W
Reverse Transfer Capacitance (Crss@Vds)	2.2pF
RDS(on)	910mΩ
Number	1 N-channel
Input Capacitance(Ciss)	285pF
Gate Charge(Qg)	16.5nC
Type	N-Channel

In-Stock: 6

6 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 4.6307$ 3.9361	$ 3.94
10+	$ 3.9731$ 3.3772	$ 33.77
50+	$ 3.5823$ 3.0450	$ 152.25
100+	$ 3.1868$ 2.7088	$ 270.88
500+	$ 3.0059$ 2.5551	$ 1277.55
1,000+	$ 2.9231$ 2.4847	$ 2484.70
Standard Packaging800/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-263-7L
Drain to Source Voltage	1.7kV
Current - Continuous Drain(Id)	6.7A
Output Capacitance(Coss)	15.3pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4.5V
Pd - Power Dissipation	86W
Reverse Transfer Capacitance (Crss@Vds)	2.2pF
RDS(on)	910mΩ
Number	1 N-channel
Input Capacitance(Ciss)	285pF
Gate Charge(Qg)	16.5nC
Type	N-Channel