HXY MOSFET IPD50N04S410ATMA1-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	40V
Output Capacitance(Coss)	148pF
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Pd - Power Dissipation	34.6W
RDS(on)	7.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	112pF
Number	1 N-channel
Input Capacitance(Ciss)	1.639nF
Gate Charge(Qg)	16nC@4.5V
Type	N-Channel

In-Stock: 97

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Qty	Unit Price	Total Amount
1+	$ 0.4899$ 0.4165	$ 0.42
10+	$ 0.3874$ 0.3293	$ 3.29
30+	$ 0.3435$ 0.2920	$ 8.76
100+	$ 0.2881$ 0.2449	$ 24.49
500+	$ 0.2637$ 0.2242	$ 112.10
1,000+	$ 0.2474$ 0.2103	$ 210.30
Standard Packaging2500/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	40V
Output Capacitance(Coss)	148pF
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.5V
Pd - Power Dissipation	34.6W
RDS(on)	7.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	112pF
Number	1 N-channel
Input Capacitance(Ciss)	1.639nF
Gate Charge(Qg)	16nC@4.5V
Type	N-Channel