HXY MOSFET FDMS86103L-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Configuration	Standalone
Drain to Source Voltage	100V
Output Capacitance(Coss)	736pF
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Pd - Power Dissipation	97W
Reverse Transfer Capacitance (Crss@Vds)	2.04pF
RDS(on)	6.4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	2.944nF
Gate Charge(Qg)	39.4nC@10V
Type	N-Channel

In-Stock: 83

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Qty	Unit Price	Total Amount
1+	$ 1.6335$ 1.3885	$ 1.39
10+	$ 1.3827$ 1.1753	$ 11.75
30+	$ 1.2248$ 1.0411	$ 31.23
100+	$ 1.0652$ 0.9055	$ 90.55
500+	$ 0.9919$ 0.8432	$ 421.60
1,000+	$ 0.9609$ 0.8168	$ 816.80
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Configuration	Standalone
Drain to Source Voltage	100V
Output Capacitance(Coss)	736pF
Current - Continuous Drain(Id)	80A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Pd - Power Dissipation	97W
Reverse Transfer Capacitance (Crss@Vds)	2.04pF
RDS(on)	6.4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	2.944nF
Gate Charge(Qg)	39.4nC@10V
Type	N-Channel