HXY MOSFET IRF7389PBF-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Configuration	Standalone
Drain to Source Voltage	60V
Current - Continuous Drain(Id)	7A
Output Capacitance(Coss)	84pF
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Pd - Power Dissipation	3.5W
RDS(on)	25mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	59pF
Number	1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)	1.349nF
Gate Charge(Qg)	12.6nC@4.5V
Type	N-Channel + P-Channel

In-Stock: 99

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Not recommended for new designs

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Qty	Unit Price	Total Amount
1+	$ 1.0319$ 0.8772	$ 0.88
10+	$ 0.8561$ 0.7277	$ 7.28
30+	$ 0.7601$ 0.6461	$ 19.38
100+	$ 0.6511$ 0.5535	$ 55.35
500+	$ 0.6022$ 0.5119	$ 255.95
1,000+	$ 0.5811$ 0.4940	$ 494.00
Standard Packaging3000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Configuration	Standalone
Drain to Source Voltage	60V
Current - Continuous Drain(Id)	7A
Output Capacitance(Coss)	84pF
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Pd - Power Dissipation	3.5W
RDS(on)	25mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	59pF
Number	1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)	1.349nF
Gate Charge(Qg)	12.6nC@4.5V
Type	N-Channel + P-Channel