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HXY MOSFET IPL60R115CFD7-HXY product image
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HXY MOSFET IPL60R115CFD7-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IPL60R115CFD7-HXY
LCSC Part #
C48972074
Packaging
DFN-8(8x8)
Customer #
Key Attributes
GaN-on-Silicon Enhancement-mode Power Transistor
Datasheetpdf iconHXY MOSFET IPL60R115CFD7-HXY
In-Stock: 195
195 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 3.0224$ 2.8713$ 2.87
10+$ 2.5813$ 2.4523$ 24.52
30+$ 2.3046$ 2.1894$ 65.68
100+$ 2.0003$ 1.9003$ 190.03
500+$ 1.8733$ 1.7797$ 889.85
1,000+$ 1.818$ 1.7271$ 1727.10
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8(8x8)
Drain to Source Voltage650V
Current - Continuous Drain(Id)17A
Output Capacitance(Coss)40pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
TechnologyE-mode
Pd - Power Dissipation113W
RDS(on)100mΩ
Reverse Transfer Capacitance (Crss@Vds)0.5pF
Number1 N-channel
Input Capacitance(Ciss)125pF
Gate Charge(Qg)3.3nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • Enhancement-mode transistor, normally-off power switch
  • Ultra-high switching frequency
  • No reverse recovery charge
  • Low gate charge, low output charge
  • JEDEC-compliant, suitable for industrial applications
  • ESD protection
  • RoHS, lead-free, REACH compliant

Applications

AI Translation
  • AC-DC converter
  • DC-DC converter
  • Totem-pole power factor correction
  • Fast battery charging
  • High-density power conversion
  • High-efficiency power conversion