HXY MOSFET NVH040N65S3F-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	NVH040N65S3F-HXY
LCSC Part #	C48972068
Packaging	TO-247
Customer #
Key Attributes	SiC Power MOSFET N-Channel Enhancement Mode
Datasheet	HXY MOSFET NVH040N65S3F-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-247
Drain to Source Voltage	650V
Current - Continuous Drain(Id)	49A
Output Capacitance(Coss)	190pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	242W
RDS(on)	49mΩ
Reverse Transfer Capacitance (Crss@Vds)	19pF
Number	1 N-channel
Input Capacitance(Ciss)	1.823nF
Gate Charge(Qg)	96nC
Type	N-Channel

In-Stock: 30

30 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
1+	$ 8.7417$ 7.4305	$ 7.43
10+	$ 7.5424$ 6.4111	$ 64.11
30+	$ 6.8111$ 5.7895	$ 173.69
90+	$ 6.1984$ 5.2687	$ 474.18
Standard Packaging30/Full Tube

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-247
Drain to Source Voltage	650V
Current - Continuous Drain(Id)	49A
Output Capacitance(Coss)	190pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	242W
RDS(on)	49mΩ
Reverse Transfer Capacitance (Crss@Vds)	19pF
Number	1 N-channel
Input Capacitance(Ciss)	1.823nF
Gate Charge(Qg)	96nC
Type	N-Channel